<?xml version="1.0" encoding="utf-8" ?> 
<rss version="2.0">
   <channel>
       <title>Instrument Engineering, Metrology, Information-Measuring Instruments and Systems. Humanities of BMSTU</title>
       <category>Instrument Engineering, Metrology, Information-Measuring Instruments and Systems. Humanities of BMSTU</category>
       <link>http://ptsj.ru</link>
       <copyright>©BaumanPress</copyright>
       <description>Instrument Engineering, Metrology, Information-Measuring Instruments and Systems. Humanities of BMSTU</description>
	   
       <lastBuildDate>Wed, 03 Jun 2026 00:00:00 +0400</lastBuildDate>
       <language>eng</language>
       <pubDate>Wed, 03 Jun 2026 00:00:00 +0400</pubDate>
       <docs>http://blogs.law.harvard.edu/tech/rss</docs>
       <managingEditor>skozlov@bmstu.ru (Sergey kozlov)</managingEditor>
       <webMaster>ak@akmedia.ru (Alexey Kuleshov)</webMaster>
	   
	   
	   
            
			<item>
                <title><![CDATA[Selection of domestic electronic components for creating a control board for a brushless motor]]></title>
                 <link>http://ptsj.rueng/catalog/iemim/sta/1112.html</link>
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				&lt;p style=&quot;text-align: justify;&quot;&gt;In the context of active development of robotics and the need to ensure technological sovereignty, the development of efficient control systems for brushless dc motors (BLDC), which are key components of modern robotic systems, is of particular relevance. The article analyzes BLDC motor control algorithms, including trapezoidal (Trap) and vector (FOC) commutation, with an emphasis on their advantages, disadvantages and areas of application. The mathematical foundations of Clarke and Park transformations necessary for the implementation of FOC, as well as the requirements for the computing resources of microcontrollers are considered. Particular attention is paid to the problem of import substitution: an overview of the domestic electronic component base (ECB) for creating control boards, including microcontrollers (for example, MIK32 Amur) and possible analogues of foreign MOSFET transistor drivers is proposed. Key problems are identified, such as the lack of domestic high-frequency MOSFET transistors and specialized drivers, which hinders the development of autonomous robotic systems. The article offers practical solutions for implementing control algorithms on domestic components and emphasizes the need to develop domestic ECB to achieve technological independence. The results of the study can be useful for developers of robotic systems, electronic engineers and specialists in the field of automated control.&lt;/p&gt;

				&lt;/body&gt;
			&lt;/html&gt;
					</description>
                 <category>books</category>
                 <pubDate>Wed, 03 Jun 2026 00:00:00 +0400</pubDate>
                 <guid>http://ptsj.rueng/catalog/iemim/sta/1112.html</guid>
              </item>
			  
			<item>
                <title><![CDATA[Application of SiC transistors in power electronics]]></title>
                 <link>http://ptsj.rueng/catalog/iemim/sta/1115.html</link>
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				&lt;p style=&quot;text-align: justify;&quot;&gt;This article explores the potential of silicon carbide (SiC) field-effect transistors in power converter devices. It examines the physical foundations and key advantages of wide-bandgap semiconductor devices, including high critical breakdown field, increased thermal conductivity, and operation at temperatures of 200 &amp;deg;C and above. A comparative analysis of the static and dynamic characteristics of power switches based on SiC MOSFETs and conventional silicon power switches based on IGBTs and MOSFETs is provided. The practical aspects of using SiC transistors in switching power supplies, inverters, and traction drive systems are described. It is shown that SiC technology can significantly improve converter efficiency, reduce system weight and dimensions, and expand the operating frequency range. Particular attention is paid to SiC device control, the influence of parasitic inductances on dynamic processes, and overvoltage protection methods. The work demonstrates that the transition to SiC transistors is an important direction in the development of energy-efficient power electronics.&lt;/p&gt;

				&lt;/body&gt;
			&lt;/html&gt;
					</description>
                 <category>books</category>
                 <pubDate>Wed, 03 Jun 2026 00:00:00 +0400</pubDate>
                 <guid>http://ptsj.rueng/catalog/iemim/sta/1115.html</guid>
              </item>
			  
		
		
		
   </channel>
</rss>









