Field-effect transistors
| Authors: Paragulgov A.M., Glinskaya E.V. |  |
| Published in issue: #4(99)/2025 | |
| DOI: | |
Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Solid-state electronics, radioelectronic components, micro - and nanoelectronics |
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Keywords: field-effect transistors, control p-n junction, current-voltage characteristics, high input resistance, analog circuits, photodiode amplifier, frequency properties, variable resistance |
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| Published: 27.09.2025 | |
This paper examines field-effect transistors as active semiconductor devices, where the output current is controlled by an electric field. The fundamental principles of operation of field-effect transistors with a control p-n junction, their structural features, current-voltage characteristics, and circuit configurations are described. Special attention is given to the advantages of such transistors, including high input resistance and excellent frequency properties. Examples of their application in engineering practice are also provided, including their use in analog circuits, photodiode amplifiers, and circuits with a variable gain factor. The work emphasizes the significance of field-effect transistors in modern electronics and their advantages over bipolar transistors.
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