Application of SiC transistors in power electronics

This article explores the potential of silicon carbide (SiC) field-effect transistors in power converter devices. It examines the physical foundations and key advantages of wide-bandgap semiconductor devices, including high critical breakdown field, increased thermal conductivity, and operation at temperatures of 200 °C and above. A comparative analysis of the static and dynamic characteristics of power switches based on SiC MOSFETs and conventional silicon power switches based on IGBTs and MOSFETs is provided. The practical aspects of using SiC transistors in switching power supplies, inverters, and traction drive systems are described. It is shown that SiC technology can significantly improve converter efficiency, reduce system weight and dimensions, and expand the operating frequency range. Particular attention is paid to SiC device control, the influence of parasitic inductances on dynamic processes, and overvoltage protection methods. The work demonstrates that the transition to SiC transistors is an important direction in the development of energy-efficient power electronics.

References

[1] Balabukh N.V. Power Semiconductor Devices. Moscow, Academia Publ., 2020, 456 p. (In Russ.).

[2] Kimoto T., Cooper J.A. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications. Wiley, 2014.

[3] Baliga B.J. Fundamentals of Power Semiconductor Devices. Springer, 2018.

[4] Kharitonov S.A., Levinshtein M.E. Wide-Gap Semiconductor Structures for Power Electronics. Moscow, Tekhnosfera Publ., 2019, 320 p. (In Russ.).

[5] Hefner A.R. et al. Silicon Carbide Power MOSFET Model and Parameter Extraction for Circuit Simulation. IEEE Transactions on Power Electronics, 2019, vol. 34, no. 8, pp. 7892–7904.

[6] Lee J. et al. Comparison of 1200V SiC MOSFET and Si IGBT Based on Power Loss Analysis in Induction Heating Application. IEEE Transactions on Power Electronics, 2020, vol. 35, no. 5, pp. 4880–4888.

[7] Ivanov V.P., Petrov K.S. Loss Analysis in SiC and GaN Power Switches. Electrical Engineering, 2021, no. 5, pp. 34–41. (In Russ.).

[8] Wang J., Chung H.S.-H. A Critical Review of Silicon Carbide Power Devices and Their Applications. IEEE Transactions on Industrial Electronics, 2022, vol. 69, no. 2, pp. 1255–1277.

[9] Zhang Z. et al. Design and Performance Evaluation of a 10-kW High-Efficiency SiC-Based PV Inverter. IEEE Transactions on Industrial Electronics, 2022, vol. 69, no. 4, pp. 3451–3461.

[10] Williams R.K. et al. The Unstoppable Force of SiC: Technology, Design, and Applications. IEEE Power Electronics Magazine, 2021, vol. 8, no. 3, pp. 28–39.