Study of influence of the wire and tape weldings, as well as of the compound, on the parameters of a four-channel switch on the PIN diodes
Authors: Kyarimov E.V., Tarasenko F.V., Andreev D.V. | |
Published in issue: #6(83)/2023 | |
DOI: 10.18698/2541-8009-2023-6-907 | |
Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Solid-state electronics, radioelectronic components, micro - and nanoelectronics |
|
Keywords: four-channel switch, pin diode, voltage standing wave ratio, compound, wire welding, tape welding, two-port measurements, high frequency range |
|
Published: 19.06.2023 |
The paper considers various types of implementation and performance of the high-frequency single-pole four-way switch based on the data obtained by measuring its main parameters, namely the voltage standing wave ratio and reverse attenuation or decoupling taking into account the design features. The switch design is using the unpackaged pin diodes welded to the printed circuit board with wire or tape and coated with a compound, which is able to significantly increase reliability and service life of the device. The operating frequency range of the four-channel pin-diode switch is 1…30 MHz making it possible to use it to change the operating mode of the high-frequency communication devices.
References
[1] Kochemasov V.N., Kirpichenkov A.I. Solid-state microwave switches. Part 1. Part 2. Part 3. Elektronika: Nauka, Tekhnologiya, Biznes, 2017, no. 10, 2018, no. 1–2. (In Russ.).
[2] Boles T., Brogle J., Rozbicki A. A Monolithic, 1000 Watt SPDT Switch. IEEE MTT-S International Microwave Symposium Digest, Atlanta, GA, USA, IEEE, 2008. http://doi.org/10.1109/MWSYM.2008.4633297
[3] Vaysblat A.V. Kommutatsionnye ustroystva SVCh na poluprovodnikovykh diodakh [Microwave switching devices on semiconductor diodes]. Moscow, Radio i svyaz’ Publ., 1987, 120 p. (In Russ.).
[4] Bova N.T., Stukalo P.A., Khramov V.A. Upravlyayushchie ustroystva SVCh [Microwave control devices]. Kiev, Tekhnіka Publ., 1973, 164 p. (In Russ.).
[5] Vinenko V.G., Guleykov Yu.M., Karamzina V.V. et al. SVCh pereklyuchateli na PIN-diodakh: obzory po elektronnoy tekhnike [Microwave switches on PIN-diodes: reviews on electronic technology]. Moscow, Elektronika Publ., 1990, 76 p. (In Russ.).
[6] Vaysblat A.V. Kommutatsionnye ustroystva SVCh na poluprovodnikovykh diodakh [Microwave switching devices on semiconductor diodes]. Moscow, Radio i svyaz’ Publ., 1987, 120 p. (In Russ.).
[7] Andreev D.V., Bondarenko G.G., Andreev V.V., Stolyarov A.A. Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors. Sensors, 2020, vol. 20, iss. 8, pp. 2382(1–11). https://doi.org/10.3390/s20082382
[8] Andreev D.V., Maslovsky V.M., Andreev V.V., Stolyarov A.A. Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation. Phys. Status Solidi A, 2022, vol. 219, iss. 9, pp. 2100400(1–5). https://doi.org/10.1002/pssa.202100400
[9] Bondarenko G.G., Andreev V.V., Stolyarov A.A., Tkachenko A.L. Modification of metal-oxide-semiconductor devices by electron injection in high fields. Vacuum, 2002, vol. 67, no. 3–4, pp. 617–621. https://doi.org/10.1016/S0042-207X(02)00262-2
[10] Mazin A.V., Tkachenko A.L. Simulation of the distribution of dopants in a semiconductor at various temperatures and times during thermal diffusion. Izvestiya Instituta inzhenernoy fiziki, 2022, no. 3 (65), pp. 60–63. (In Russ.).
[11] Kuznetsov V. HBM, MM, and CBM ESD Ratings Correlation Hypothesis. IEEE Transactions on Electromagnetic Compatibility, 2018, vol. 60, no. 1, pp. 107–114. https://doi.org/10.1109/TEMC.2017.2700492