Developing the gaalas/gaas heterostructure by means of the molecular-beam epitaxy method using the indirect control of the coating growth rate

Authors: Titushkin A.V.
Published in issue: #10(15)/2017
DOI: 10.18698/2541-8009-2017-10-182
Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Instruments and Measuring Methods
Keywords: molecular-beam epitaxy, effusion cell, coating growth rate control, semiconducting heterostructures, heterojunction, two-dimension electron gas, Van der Pauw method, quantum Hall effect
Published: 04.10.2017

It is shown, that the heterostructureGaAlAs/GaAs developed with the use of coating growth rate controlling method by means of the verifyingdependencies of the deposited material flow on the temperature in the effusion cells possesses clear-cut semiconducting properties and has two-dimension electron gasat the boundary of heterojunction, which is indicative ofthe manufactured sample high quality. The feasibility of this method application has been analyzed.

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