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Developing the gaalas/gaas heterostructure by means of the molecular-beam epitaxy method using the indirect control of the coating growth rate
| Authors: Titushkin A.V. | Published: 04.10.2017 |
| Published in issue: #10(15)/2017 | |
| DOI: DOI: 10.18698/2541-8009-2017-10-182 | |
| Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Instruments and Measuring Methods | |
| Keywords: molecular-beam epitaxy, effusion cell, coating growth rate control, semiconducting heterostructures, heterojunction, two-dimension electron gas, Van der Pauw method, quantum Hall effect | |