The problems of obtaining lightly doped epitaxial AlGaAs layers by the method of liquid phase epitaxy

Authors: Shumakin N.I.
Published in issue: #2(31)/2019
DOI: 10.18698/2541-8009-2019-2-445
Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Solid-state electronics, radioelectronic components, micro - and nanoelectronics
Keywords: heterostructure, liquid phase epitaxy, lightly doped layer, background impurities, doping, compensation, gallium arsenide, rare-earth elements
Published: 20.02.2019

Lightly doped AlGaAs layers allow to create epitaxial structures for high-performance devices for various purposes, which have special properties. A number of problems with obtaining a low concentration of intrinsic carriers in such layers arises during forming lightly doped layers in various applications. One of the main problems in the formation of such layers is the presence of background impurities in the initial components. The article considers the possibility of obtaining a lightly doped AlGaAs layer by the method of liquid phase epitaxy of doping the solution-melt with rare-earth elements and the method of charge carrier compensation. The advantages of using each of the methods for a particular type of instrument are described.

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