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The problems of obtaining lightly doped epitaxial AlGaAs layers by the method of liquid phase epitaxy
| Authors: Shumakin N.I. | Published: 20.02.2019 |
| Published in issue: #2(31)/2019 | |
| DOI: DOI: 10.18698/2541-8009-2019-2-445 | |
| Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems | Chapter: Solid-state electronics, radioelectronic components, micro - and nanoelectronics | |
| Keywords: heterostructure, liquid phase epitaxy, lightly doped layer, background impurities, doping, compensation, gallium arsenide, rare-earth elements | |