The perspective of the multicriteria optimization method in the process of ion implantation of microcomponents

Today, semiconductor manufacturing uses almost the entire periodic table for implantation. The following alloying impurities are most often used in silicon production: arsenic, phosphorus, boron, boron difluoride, indium, antimony, germanium, silicon, nitrogen, hydrogen, and others.
There is a whole chronology of the creation, merger and closure of large foreign companies supplying equipment for ion implantation. Russia has its own milestone in this area. In this article, plans will be discussed to solve the optimization problem in the operation of the ion implantation unit.

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