Main Catalog Mechanical Engineering and Machine Science Technology and Equipment of Mechanical and Physical Processing

Features of photolitography in a deep uv

Authors: Baklykov D.A., Gromov M.I., Tashev R.A.
Published in issue: #10(39)/2019
DOI: 10.18698/2541-8009-2019-10-535
Category: Mechanical Engineering and Machine Science \| Chapter: Technology and Equipment of Mechanical and Physical Processing
Keywords: deep ultraviolet photolithography, numerical aperture, Rayleigh criterion, drop plasma source, high-temperature plasma, multilayer optical system, photomask, photoresist
Published: 08.10.2019

Now one of the most promising is the method of photolithography in deep ultraviolet. The main advantages and disadvantages of this method, the characteristic materials of photoresists and the optical system are shown. The system for transmitting an image onto a substrate is described in detail with the highlighting of the function of each coating used in it. The design of the unit for reproducing the photolithography method in deep ultraviolet is given, and individual components of the system are examined in detail with highlighting the requirements for each of them. The modern areas of application of the method and its production limitations are shown.

References

[1] Mbanaso Ch., Denbeaux G. EUV lithography. College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA.

[2] Pirati A., Peeters R., Smith D. EUV lithography performance for manufacturing: status and outlook. Proc. SPIE, 2016, vol. 9776. DOI: 10.1117/12.2220423 URL: https://www.spie.org/Publications/Proceedings/Paper/10.1117/12.2220423

[3] Abhari R.S., Rollinger B., Giovannini A.Z., et al. Laser-produced plasma source for extreme-ultraviolet lithography applications. J. Micro Nanolith. MEM., 2012, vol. 11, no. 2, art. 0211114. DOI: 10.1117/1.JMM.11.2.021114 URL: https://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-11/issue-2/021114/Laser-produced-plasma-light-source-for-extreme-ultraviolet-lithography-applications/10.1117/1.JMM.11.2.021114.short?SSO=1

[4] Fomenkov I., Brandt D., Ershov A., et al. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling. Adv. Opt. Technol., 2017, vol. 6, no. 3-4, pp. 173–186. DOI: 10.1515/aot-2017-0029 URL: https://www.degruyter.com/view/j/aot.2017.6.issue-3-4/aot-2017-0029/aot-2017-0029.xml

[5] Mizoguchi H., Nakarai H., Abe T., et al. Nowak high power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing. Gigaphoton Inc. Shinomiya Hiratsuka Kanagawa, 2017.

[6] Canova F., Poletto L. Optical technologies for extreme-ultraviolet and soft X-ray coherent sources. Springer, 2015.

[7] Dolgov A. Plasma-assisted cleaning of extreme UV optics. PhD Thesis. University of Twente, Netherlands.

[8] Hellweg D., Perlitz S., Magnusson K., et al. Actinic review of EUV masks: performance data and status of the AIMS EUV system. Proc. SPIE, 2017, vol. 10143. DOI: 10.1117/12.2261662 URL: https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10143/101430J/Actinic-review-of-EUV-masks--performance-data-and-status/10.1117/12.2261662.short

[9] Itani T., Kozawa T. Resist materials and processes for extreme ultraviolet lithography. Jpn. J. Appl. Phys., 2013, vol. 52, no. 1R, art. 010002. DOI: 10.7567/JJAP.52.010002 URL: https://iopscience.iop.org/article/10.7567/JJAP.52.010002

[10] Song T., Jung J.H., Rim W.J., et al. A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications. ISSCC, 2018, pp. 106–108. DOI: 10.1109/ISSCC.2018.8310252 URL: https://ieeexplore.ieee.org/document/8310252

[11] Pirati A., van Schoot J., Troost K., et al. The future of EUV lithography: enabling Moore’s law in the next decade. Proc. SPIE, 2017, vol. 10143. DOI: 10.1117/12.2261079 URL: https://spie.org/Publications/Proceedings/Paper/10.1117/12.2261079?SSO=1